| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
A semiconductor device is disclosed, comprising: a substrate; a semiconductor layer disposed on the substrate; a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode disposed between the source electrode and the drain electrode; a dielectric layer disposed on at least a part of the surface of the semiconductor layer which is between the gate electrode and the drain electrode, the dielectric layer having at least a recess therein; and a source field plate disposed on the dielectric layer and at least partially covering the recess, the source field plate being electrically connected to the source electrode through at least a conductive path. A method of manufacturing such a semiconductor device is also disclosed. |
| 申请公布号 |
US2016043184(A1) |
申请公布日期 |
2016.02.11 |
| 申请号 |
US201514616985 |
申请日期 |
2015.02.09 |
| 申请人 |
Dynax Semiconductor, Inc. |
发明人 |
ZHANG Naiqian;PEI Fengli |
| 分类号 |
H01L29/40;H01L29/16;H01L29/66;H01L29/778 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; a semiconductor layer disposed on the substrate; a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode disposed between the source electrode and the drain electrode; a dielectric layer disposed on at least a part of the surface of the semiconductor layer which is between the gate electrode and the drain electrode, the dielectric layer having at least a recess therein; and a source field plate disposed on the dielectric layer and at least partially covering the recess, the source field plate being electrically connected to the source electrode through at least a conductive path. |
| 地址 |
Kunshan CN |
