| 摘要 |
The present invention relates to a selective emitter element and a method for manufacturing same. The selective emitter element of the present invention comprises: a semiconductor substrate; an emitter layer which includes, on the substrate, first regions having a predetermined period and a second region located between the first regions, the height of the upper surfaces of the first regions being higher than or equal to the height of the upper surface of the second region; and a transparent conductive layer formed on the emitter layer. |
