METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM THERMISTOR SENSOR

摘要

Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Ti x Al y N z (where 0.70 ‰¤ y/(x+y) ‰¤ 0.95, 0.4 ‰¤ z ‰¤ 0.5, and x+y+z = 1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.