| 摘要 |
PURPOSE:To form a diffusion preventive layer with better diffusion preventive effect by a method wherein a material with crystalizing temperature higher than the heat treatment temperature of a semiconductor device is adopted. CONSTITUTION:A P type base region 2 and an N type emitter region 3 are formed on the surface of an N type silicon substrate 1. A silicon oxide film 4 is formed on the surface of P type base region 2 and N type emitter region 3. Next, openings are made in the silicon oxide film 4 to form diffusion preventive layers 5 comprising amorphous material and aluminium interconnection layers 6. The crystalizing temperature of applicable amorphous material shall be higher than the heat treatment temperature of semiconductor device. In such a constitution, the reaction between the silicon semiconductor substrate 1 and the aluminium interconnection layers 6 at the openings in the silicon oxide film 4 can be restrained from being caused. Furthermore, the thickness of diffusion preventive layer 5 can be lessened. |
