发明名称 |
CIRCUIT MODULE |
摘要 |
In a high-frequency circuit module, a resistance film (7a) is formed on a side of a semiconductor circuit chip (6), mounted above a dielectric substrate (1) through a ground metal layer (4), facing the dielectric substrate. A distance from the ground metal layer (2) to the resistance film (7) is a 1/4 wavelength at a predetermined frequency, and the resistance film has a sheet resistance equal to a characteristic impedance of air. A second dielectric substrate (12) with a metal layer (13) formed on a side opposite to the resistance film (7a) can be mounted. When being adhered to the second dielectric substrate (12), the resistance film (7a) has a characteristic impedance determined by a permittivity of a material of the semiconductor circuit chip (6). When it is formed spaced apart from the semiconductor circuit chip, the resistance film has a sheet resistance equal to a characteristic impedance of air. The thickness of the second dielectric substrate is a 1/4 wavelength in a desired frequency. |
申请公布号 |
EP2983203(A1) |
申请公布日期 |
2016.02.10 |
申请号 |
EP20150183032 |
申请日期 |
2006.03.23 |
申请人 |
FUJITSU LIMITED;SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
发明人 |
SHIMURA, TOSHIHIRO;OHASHI, YOJI;NUNOKAWA, MITSUJI |
分类号 |
H01L23/552;H01L23/055;H01L23/06;H01L23/66 |
主分类号 |
H01L23/552 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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