| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is not likely to cause sticking, and provide a manufacturing method of the semiconductor device. <P>SOLUTION: A semiconductor device manufacturing method comprises: a step of forming an opening 1c in a substrate 1 having a catalyst layer 3 formed on one surface 1a, the opening 1c reaching from an opposite side to the one surface 1a to a rear face 3a of the catalyst layer 3; a step of forming graphene 5 on the rear face 3a of the catalyst layer 3 at the opening 1c; and a step of removing at least a part of the catalyst layer 3. A thermal treatment can be performed after forming the opening 1c and before forming the graphene 5. A protection layer can be formed on a surface of the catalyst layer 3 before forming the graphene 5. <P>COPYRIGHT: (C)2013,JPO&INPIT |
