发明名称 プラズマ処理装置及び方法
摘要 To provide a plasma processing device and a plasma processing method capable of performing high-speed processing. In an inductively-coupled plasma torch unit, a coil, a lid and a first ceramic block are bonded together, and a long chamber has an annular shape. Plasma generated in the chamber is ejected from an opening in the chamber toward a substrate. The substrate is processed by moving the long chamber and the substrate mounting table relatively in a direction perpendicular to a longitudinal direction of the opening. The first ceramic block is cooled efficiently by allowing a refrigerant to flow in a refrigerant flow path.
申请公布号 JP5857207(B2) 申请公布日期 2016.02.10
申请号 JP20130237626 申请日期 2013.11.18
申请人 パナソニックIPマネジメント株式会社 发明人 奥村 智洋
分类号 H05H1/24;H01L21/20;H01L21/324;H05H1/46 主分类号 H05H1/24
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