| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a cleaning agent for a semiconductor provided with tungsten and tungsten alloy wiring which is excellent in removal of an abrasive particle residue derived from an abrasive and removal of a metal residue on an insulating film and also excellent in tungsten corrosion inhibition in tungsten wiring. <P>SOLUTION: The cleaning agent for a semiconductor provided with tungsten and tungsten alloy wiring contains organic amine (A), quaternary ammonium hydroxide (B), a chelating agent (C), and water (W) as essential ingredients, and its pH is 7.0-14.0. <P>COPYRIGHT: (C)2011,JPO&INPIT |
