| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an invert staggered thin film transistor on which a semiconductor film is formed by an oxide capable of low-temperature film formation, wherein light resistance and environmental stability resistance against ultraviolet and the like of a protection film formed on the semiconductor film are improved, and to provide a manufacturing method of the invert staggered thin film transistor. <P>SOLUTION: A bottom-gate top-contact thin film transistor 10 comprises a gate electrode 2 pattern formed on a substrate 1, a gate insulation film 3 covering the gate electrode 2, an oxide semiconductor film 4 pattern formed on the gate insulation film 3, a source electrode 6S and a drain electrode 6D which are pattern formed on the oxide semiconductor film 4, and a protection film 7 covering at least the oxide semiconductor film 4 exposed on between the source electrode 6S and the drain electrode 6D. The protection film 7 is formed of an oxide semiconductor material. It is preferable that the oxide semiconductor film 4 and the protection film 7 are composed of an oxide semiconductor material, which is an amorphous oxide containing InMZnO (where M represents at least one among Ga, Al and Fe). <P>COPYRIGHT: (C)2013,JPO&INPIT |
