| 摘要 |
The present invention relates to a memory device including a plurality of memory modules (2) and a plurality of control lines. Each memory module (2) includes a plurality of memory units (20). Each memory unit (20) includes: a plurality of memory cell groups (21), each of which includes at least one memory cell (211); a plurality of first bit lines (311), each of which is coupled to the at least one memory cell (211) of a respective memory cell group (21); a second bit line; and a plurality of controllable circuits (41), each of which has an input terminal (411) coupled to a respective first bit line (311), an output terminal (412) coupled to the second bit line, and a control terminal (416). Each control line is coupled to the control terminal (416) of a corresponding controllable circuit (41) of each of at least one memory unit (20) of each memory module (2). The memory device consumes relatively small power. |
