| 摘要 |
Provided is a glass composition for protecting a semiconductor junction for forming a glass layer which protects a pn junction, wherein the glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in a molten state obtained by melting a glass raw material which contains at least ZnO, SiO 2 , B 2 O 3 , Al 2 O 3 and at least two oxides of alkaline earth metals selected from a group consisting of BaO, CaO and MgO and substantially contains none of Pb, As, Sb, Li, Na and K, the glass composition for protecting a semiconductor junction containing no filler. According to the present invention, it is possible to manufacture a semiconductor device having high reliability using a glass material containing no lead. Further, a baking temperature at which a layer made of the glass composition for protecting a semiconductor junction is baked can be set further lower than a baking temperature at which a layer made of a conventional "glass material containing lead silicate as a main component" is baked so that a semiconductor device having an excellent switching characteristic can be manufactured. |
