| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device or a plasma processing method with or by which a shape obtained as the processing result is less fluctuated.SOLUTION: A plasma processing device: includes a processing chamber, a sample stage disposed in a lower part of the processing chamber to be placed with a wafer thereon, and an introduction hole disposed in an upper part of the sample stage to introduce a processing gas into the processing chamber; and performs etching processing of a film structure disposed on an upper surface of the wafer by using a plasma formed by using the processing gas. The film structure is composed so as to have a polysilicon film as a processing object on a substrate. An etching processing step of performing etching processing of the polysilicon film on an upper surface of the wafer is executed after execution of a coating step of forming a plasma by supply of a coating gas into the processing chamber to coat a surface of a member in the processing chamber with a film containing Si as a component, and a metal cleaning step of forming a plasma in the processing chamber to reduce metals included in the film is executed before the etching processing step. |
