Semiconductor device including a reservoir capacitor

摘要

A semiconductor device includes: a Through Silicon Via (TSV) region extending in a first direction and crossing a center portion of a semiconductor device; a plurality of cell regions disposed at both sides of the TSV region in a second direction crossing the first direction; a plurality of peripheral circuit regions each disposed between the TSV region and a corresponding cell region or between two neighboring cell regions in the first direction; a plurality of test pad regions each disposed at an edge portion of the semiconductor device and having a plurality of test pads, wherein the plurality of test pad regions encloses the cell regions, the peripheral circuit regions, and the TSV region; and a reservoir capacitor disposed below corresponding test pads in a test pad regions.

主权项

1. A semiconductor device comprising:
a Through Silicon Via (TSV) region extending in a first direction and crossing a center portion of the semiconductor device; a plurality of cell regions disposed at both sides of the TSV region in a second direction crossing the first direction; a plurality of peripheral circuit regions, each disposed between the TSV region and a corresponding cell region or between two neighboring cell regions in the first direction; a plurality of test pad regions, each disposed at an edge portion of the semiconductor device and including a plurality of test pads, the plurality of test pad regions enclosing the cell regions, the peripheral circuit regions, and the TSV region; and a reservoir capacitor disposed below corresponding test pads in the test pad regions.