| 发明名称 | Transistors and methods of manufacturing the same | ||
| 摘要 | Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer. | ||
| 申请公布号 | US9257508(B2) | 申请公布日期 | 2016.02.09 |
| 申请号 | US201213595580 | 申请日期 | 2012.08.27 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Lee Chang-seung;Lee Joo-ho;Kim Yong-sung;Kim Jun-seong;Moon Chang-youl |
| 分类号 | H01L29/786;H01L29/16;H01L29/66;H01L29/778;H01L21/683;H01L29/417;H01L29/423;H01L29/78 | 主分类号 | H01L29/786 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A transistor, comprising: a gate on a substrate; a channel layer having a three-dimensional (3D) channel region partially covering both side surfaces and a top surface of the gate; a source electrode contacting a first region of the channel layer, wherein the source electrode includes, a first source electrode portion, an upper surface of the first source electrode portion being higher than an upper surface of the 3D channel region,a second source electrode portion between the first source electrode portion and the 3D channel region,bottom surfaces of the first and second source electrode portions directly contact an upper surface of the channel layer, anda thickness of the first source electrode portion being greater than a thickness of the second source electrode portion; and a drain electrode contacting a second region of the channel layer. | ||
| 地址 | Gyeonggi-Do KR | ||