| 发明名称 | Solid-state imaging device | ||
| 摘要 | According to one embodiment, a solid-state imaging device is provided which comprises a floating diffusion, a transfer gate, and a photoelectric conversion element. The floating diffusion is provided in a surface of a semiconductor layer. The transfer gate extends inward from the surface of the semiconductor layer and bends in the semiconductor layer toward the floating diffusion side. The photoelectric conversion element is provided in part of the semiconductor layer on the opposite side of the transfer gate from the floating diffusion and stretches from the side-surface side of the transfer gate to a position under the bottom thereof. | ||
| 申请公布号 | US9257473(B2) | 申请公布日期 | 2016.02.09 |
| 申请号 | US201514729175 | 申请日期 | 2015.06.03 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Maeda Motohiro |
| 分类号 | H01L27/148;H01L27/146 | 主分类号 | H01L27/148 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A solid-state imaging device comprising: a floating diffusion provided in a surface of a semiconductor layer; a transfer gate extending inward from the surface of the semiconductor layer and bending in the semiconductor layer toward the floating diffusion side; and a photoelectric conversion element provided in part of the semiconductor layer on the opposite side of the transfer gate from the floating diffusion and stretching from the side-surface side of the transfer gate to a position under the bottom thereof. | ||
| 地址 | Minato-ku JP | ||