发明名称 |
Methods of forming a Field Effect Transistor, including forming a region providing enhanced oxidation |
摘要 |
Methods of forming a Field Effect Transistor (FET) are provided. The methods may include forming a region that provides enhanced oxidation under a fin-shaped FET (FinFET) body. |
申请公布号 |
US9257327(B2) |
申请公布日期 |
2016.02.09 |
申请号 |
US201313859482 |
申请日期 |
2013.04.09 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Rodder Mark S.;Seo Kang-ill |
分类号 |
H01L21/76;H01L21/762;H01L29/66;H01L27/088;H01L29/78;H01L21/8238;H01L21/8234;H01L29/786;H01L27/092 |
主分类号 |
H01L21/76 |
代理机构 |
Myers Bigel Sibley & Sajovec, PA |
代理人 |
Myers Bigel Sibley & Sajovec, PA |
主权项 |
1. A method of forming a Field Effect Transistor (FET), comprising:
implanting ions into a substrate comprising a fin-shaped FET (FinFET) body protruding from the substrate, such that the FinFET body overlaps a portion of an implanted region of the ions, wherein the FinFET body comprises opposite first and second sidewalls; recessing the substrate to remove portions of the implanted region exposed by the FinFET body and such that the FinFET body overlaps a remaining portion of the implanted region; forming an isolation layer on the substrate and on sidewalls of the remaining portion of the implanted region; and oxidizing the remaining portion of the implanted region to provide an oxidized region that laterally extends under the FinFET body a distance that comprises at least a majority of a width of the FinFET body, wherein the width comprises a distance from the first sidewall to the opposite second sidewall of the FinFET body. |
地址 |
KR |