CVD flowable gap fill

摘要

Provided are methods of filling gaps on a substrate by creating flowable silicon oxide-containing films. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrate. In certain embodiments, the methods involve using a catalyst in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant.

主权项

1. A method of filling a gap on a substrate with a dielectric film comprising:
introducing process gases comprising a silicon-containing precursor, an oxidant and a catalyst-containing compound to a reaction chamber housing the substrate; exposing the substrate to the process gas under conditions such that a condensed flowable film forms and at least partially fills the gap, wherein the method comprises an acid-catalyzed condensation.