发明名称 |
Method for embedding a chipset having an intermediary interposer in high density electronic modules |
摘要 |
A method for creating a high density electronic module including the steps of coupling a die to an interposer for form a chipset, mounting the chipset to a substrate, coupling a wafer to the substrate so that the chipset is within a window formed in the wafer, filling the window with encapsulant to encapsulate the chipset, removing the substrate to create a reconstructed wafer, and providing an interconnection structure on the interposer to form the high density electronic module. |
申请公布号 |
US9257355(B2) |
申请公布日期 |
2016.02.09 |
申请号 |
US201414177595 |
申请日期 |
2014.02.11 |
申请人 |
The Charles Stark Draper Laboratory, Inc. |
发明人 |
Smith Brian;Karpman Maurice |
分类号 |
H01L23/02;H01L23/31;H01L21/56;H01L25/10 |
主分类号 |
H01L23/02 |
代理机构 |
Locke Lord LLP |
代理人 |
Locke Lord LLP ;Capelli Christopher J.;Viderman Alexander |
主权项 |
1. A high density electronic module component comprising:
a chipset including a die coupled to an interposer, the chipset, the die and the interposer together having a first thickness; a wafer defining a window surrounding the chipset, the wafer having a second thickness defined by a top surface and a bottom surface of the wafer, the window extending depthwise from the top surface to the bottom surface of the wafer, wherein the first thickness does not exceed the second thickness; and encapsulant filling the window around the chipset, wherein at least a portion of the interposer is exposed. |
地址 |
Cambridge MA US |