Method for fabricating fin field effect transistors

摘要

A method of fabricating a Fin field effect transistor (FinFET) includes providing a substrate having a first fin and a second fin extending above a substrate top surface, wherein the first fin has a top surface and sidewalls and the second fin has a top surface and sidewalls. The method includes forming an insulation layer between the first and second fins. The method includes forming a first gate dielectric having a first thickness covering the top surface and sidewalls of the first fin using a plasma doping process. The method includes forming a second gate dielectric covering the top surface and sidewalls of the second fin having a second thickness less than the first thickness. The method includes forming a conductive gate strip traversing over both the first gate dielectric and the second gate dielectric.

主权项

1. A method of fabricating a Fin field effect transistor (FinFET), the method comprising:
providing a substrate having a first fin and a second fin extending above a substrate top surface, wherein the first fin has a top surface and sidewalls and the second fin has a top surface and sidewalls; forming an insulation layer between the first and second fins extending part way up the fins from the substrate top surface; forming a photo-sensitive layer over the first and second fins; patterning the photo-sensitive layer to expose the portion of the first fin above the insulation layer and cover the second fin; forming a first gate dielectric having a first thickness covering the top surface and sidewalls of the first fin using a plasma doping process; removing the photo-sensitive layer; forming a second gate dielectric covering the top surface and sidewalls of the second fin having a second thickness less than the first thickness; and forming a conductive gate strip traversing over both the first gate dielectric and the second gate dielectric.