Glass-ceramic-based semiconductor-on-insulator structures and method for making the same

摘要

Methods and apparatus for forming a semiconductor on glass-ceramic structure provide for: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a precursor glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer to thereby form an intermediate semiconductor on precursor glass structure; sandwiching the intermediate semiconductor on precursor glass structure between first and second support structures; applying pressure to one or both of the first and second support structures; and subjecting the intermediate semiconductor on precursor glass structure to heat-treatment step to crystallize the precursor glass resulting in the formation of a semiconductor on glass-ceramic structure.

主权项

1. A semiconductor on glass-ceramic structure comprising:
a semiconductor material component comprising a substantially single-crystal semiconductor material layer and an oxide layer of the single-crystal semiconductor material; an oxide glass material layer; and a glass-ceramic layer, wherein warpage of the semiconductor on glass-ceramic structure is no more than about 200 microns.