发明名称 半導体材料ウェハを研磨するための方法
摘要 A method for polishing at least one semiconductor wafer while supplying a polishing agent includes performing a first simultaneous double-side polishing of the front side and the back side of the at least one semiconductor wafer with first upper and lower polishing pads, edge-notch polishing the surface of the at least one semiconductor wafer, performing a second simultaneous double-side polishing of the front side and the back side of the at least on semiconductor wafer with second upper and lower polishing pads, where the upper and lower polishing pads for the first simultaneous double-side polishing are harder and less compressible than the upper and lower polishing pads for the second simultaneous double-side polishing and performing single-side polishing of the front side of the at least one semiconductor wafer.
申请公布号 JP5853041(B2) 申请公布日期 2016.02.09
申请号 JP20140054822 申请日期 2014.03.18
申请人 ジルトロニック アクチエンゲゼルシャフトSiltronic AG 发明人 ユルゲン・シュバントナー
分类号 B24B37/24;B24B9/00;B24B37/00;B24B37/015;H01L21/304 主分类号 B24B37/24
代理机构 代理人
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