Method to etch non-volatile metal materials

摘要

A method for etching a stack with an Ru containing layer disposed below a hardmask and above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is etched with a dry etch. The Ru containing layer is etched, where the etching uses hypochlorite and/or O3 based chemistries. The MTJ stack is etched. The MTJ stack is capped with dielectric materials. The pinned layer is etched following the MTJ capping.

主权项

1. A method of etching a stack with an Ru containing layer disposed below a hardmask and above a magnetic tunnel junction (MTJ) stack with a pinned layer, comprising:
etching the hardmask with a dry etch; etching the Ru containing layer wherein the etching uses hypochlorite and/or O3 based chemistries; etching the MTJ stack; capping the MTJ stack with dielectric materials; and etching the pinned layer following the MTJ capping; wherein the MTJ etch uses a low bias sputter of a plasma formed from an inert gas instead of a chemical etchant gas.