Light-emitting device and manufacturing method thereof

摘要

To provide a light-emitting device that is provided with an optical member firmly bonded to a semiconductor light-emitting element and has a high light extraction efficiency, the light-emitting device includes a light-emitting element having a semiconductor layer and an optical member bonded to the light-emitting surface of the light-emitting element with a metal film being interposed therebetween wherein the metal film has a thickness in a film-forming rate conversion not less than 0.05 nm nor more than 2 times of an atomic diameter of the metal atoms forming the metal film.

主权项

1. A light-emitting device comprising:
a light-emitting element having a semiconductor layer and an optical member, wherein the optical member is bonded to the light-emitting surface of the light-emitting element with a metal film being interposed therebetween, and wherein the metal film has one or more regions having a thickness not more than 2 times of an atomic diameter of metal atoms forming the metal film.