发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device includes a bit line structure on a substrate, the bit line structure having a polysilicon layer pattern doped with impurities, and a metal layer pattern on the polysilicon layer pattern, a first spacer surrounding and contacting a sidewall of the bit line structure, the first spacer having a constant thickness, and a capacitor contact structure on the substrate, an air gap being defined between the capacitor contact structure and the first spacer. |
申请公布号 |
US9257437(B2) |
申请公布日期 |
2016.02.09 |
申请号 |
US201414475687 |
申请日期 |
2014.09.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Park Hoon;Kim Young-Seok;Lee Yeong-Cheol |
分类号 |
H01L27/108;H01L21/764 |
主分类号 |
H01L27/108 |
代理机构 |
Lee & Morse, P.C. |
代理人 |
Lee & Morse, P.C. |
主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a bit line structure on a substrate, the bit line structure including a polysilicon layer pattern doped with impurities and a metal layer pattern on the polysilicon layer pattern; forming a first insulating layer including a nitride on a sidewall of the bit line structure by a plasma treatment process; forming a second insulating layer including a nitride on the first insulating layer, wherein the first and second insulating layer are merged to each other to define a single insulating layer; etching the single insulating layer anisotropically to form a first spacer surrounding and contacting the sidewall of the bit line structure, the first spacer having a constant thickness at least on sidewalls of the polysilicon layer pattern and the metal layer pattern; and forming a capacitor contact structure on the substrate, the capacitor contact structure together with the first spacer defining an air gap therebetween. |
地址 |
Suwon-si, Gyeonggi-do KR |