Semiconductor device having metal interconnections

摘要

A method of forming a metal interconnection of semiconductor device is provided. The method includes forming a low-k dielectric layer including an opening; forming a barrier metal pattern conformally covering a bottom surface and an inner sidewall of the opening; forming a metal pattern exposing a part of the inner sidewall of the barrier metal pattern in the opening; forming a metal capping layer on the top surfaces of the metal pattern and the low-k dielectric layer using a selective chemical vapor deposition process, wherein the thickness of the metal capping layer on the metal pattern is greater than the thickness of the metal capping layer on the low-k dielectric layer; and forming a metal capping pattern covering the top surface of the metal pattern by planarizing the metal capping layer down to the top surface of the low-k dielectric layer.

主权项

1. A semiconductor device comprising:
a low-k dielectric layer including an opening; a barrier metal pattern conformally covering an inner wall of the opening; a metal pattern formed in the opening having the barrier metal pattern; a metal capping pattern covering a top surface of the metal pattern formed in the opening; and a capping insulating layer covering a top surface of the metal capping pattern and a top surface of the low-k dielectric layer, the capping insulating layer formed of an insulating material different from the low-k dielectric layer, wherein a top surface of the metal capping pattern is lower than the top surface of the low-k dielectric layer, wherein the metal pattern comprises copper and the metal capping pattern comprises ruthenium, and wherein the capping insulating layer has a first thickness on the top surface of the metal capping pattern and a second thickness on the top surface of the low-k dielectric layer, wherein the first thickness is greater than the second thickness.