System and method for a field-effect transistor with a raised drain structure

摘要

A method for forming a field-effect transistor with a raised drain structure is disclosed. The method includes forming a frustoconical source by etching a semiconductor substrate, the frustoconical source protruding above a planar surface of the semiconductor substrate; forming a transistor gate, a first portion of the transistor gate surrounding a portion of the frustoconical source and a second portion of the gate configured to couple to a first electrical contact; and forming a drain having a raised portion configured to couple to a second electrical contact and located at a same level above the planar surface of the semiconductor substrate as the second portion of the transistor gate. A semiconductor device having a raised drain structure is also disclosed.

主权项

1. A transistor comprising:
a gate having a gate contact surface; a source region; and a drain region having first and second drain portions, the first drain portion being surrounded by the gate, the second drain portion being raised and spaced away from the first drain portion and from the gate, the second drain portion having a drain contact surface, wherein the drain contact surface is a topmost surface of the raised second drain portion, the drain contact surface being substantially coplanar with the gate contact surface.