发明名称 単層カーボンナノチューブの結晶作製方法
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for preparing the crystal of an SWCNT which is very high in purity and applicable in size to an electronic device; and to provide the crystal of the SWCNT which is prepared by the method concerned and an electronic device made by using the crystal of the SWCNT. <P>SOLUTION: In the method for preparing the crystal of a single-wall carbon nanotube, a single-wall carbon nanotube, which is monodispersed in a solvent, is made to be supersaturated to crystallize the single-wall carbon nanotube. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP5854462(B2) 申请公布日期 2016.02.09
申请号 JP20110282196 申请日期 2011.12.22
申请人 公立大学法人首都大学東京 发明人 柳 和宏;中津 亨;吉宗 良祐;工藤 光
分类号 C01B31/02;H01L29/06 主分类号 C01B31/02
代理机构 代理人
主权项
地址