发明名称 |
Metrology marks for bidirectional grating superposition patterning processes |
摘要 |
Cut spacer reference marks, targets having such cut spacer reference marks, and methods of making the same by forming spacer gratings around grating lines on a first layer, and fabricating a template mask that extends across and perpendicular to such spacer gratings. Cut spacer gratings are etched into a second layer using the template mask to superimpose at least a portion of the spacer gratings of the first layer into the second layer. |
申请公布号 |
US9257351(B2) |
申请公布日期 |
2016.02.09 |
申请号 |
US201313968336 |
申请日期 |
2013.08.15 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Ausschnitt Christopher P.;Felix Nelson M.;Halle Scott S. |
分类号 |
G03F7/26;H01L21/66;G03F7/20 |
主分类号 |
G03F7/26 |
代理机构 |
DeLio, Peterson & Curcio, LLC |
代理人 |
DeLio, Peterson & Curcio, LLC ;Nowak Kelly M. |
主权项 |
1. A method of fabricating reference marks for lithography comprising:
providing grating lines on a first layer; forming spacer gratings on the first layer around said grating lines so that said spacer gratings surround and double the frequency of said grating lines on said first layer; forming a template mask extending across and perpendicular to said spacer gratings residing around said grating lines; and etching a second layer using said template mask to superimpose at least a portion of said spacer gratings having double the frequency of said grating lines of said first layer into said second layer, thereby forming cut spacer gratings in said second layer. |
地址 |
Grand Cayman KY |