Methods of singulating substrates to form semiconductor devices using dummy material

摘要

In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a plurality of active elements in a semiconductor substrate having a first side and an opposite second side, the plurality of active elements being formed adjacent the first side; forming metallization, at the first side, over the plurality of active elements to form a plurality of devices; forming openings in the semiconductor substrate, the openings surrounding each of the plurality of devices; and forming a dummy plug within the openings; providing a tape over the opposite second side of the semiconductor substrate; providing a frame and an adhesive covering the first side of the semiconductor substrate, wherein a portion of the adhesive is disposed within the openings covering the dummy plug; and singulating the semiconductor substrate
by removing the frame and the adhesive andfollowed by removing the dummy plug in the openings from the first side of the semiconductor substrate.