发明名称 |
Method of making backside illuminated image sensors |
摘要 |
A method of making a backside illuminated image sensor includes forming a first isolation structure in a pixel region of a substrate, where a bottom of the first isolation structure is exposed at a back surface of the substrate. The method further includes forming a second isolation structure in a peripheral region of the substrate, where the second isolation structure has a depth less than a depth of the first isolation structure. Additionally, the method includes forming an implant region adjacent to at least a portion of sidewalls of the first isolation structure, where the portion of the sidewalls is located closer to the back surface than a front surface of the substrate, and where the second isolation structure is free of the implant region. |
申请公布号 |
US9257326(B2) |
申请公布日期 |
2016.02.09 |
申请号 |
US201414587687 |
申请日期 |
2014.12.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Huang Kuan-Chieh;Wu Chih-Jen;Huang Chen-Ming;Yaung Dun-Nian;Tu An-Chun |
分类号 |
H01L21/762;H01L27/146;H01L31/18 |
主分类号 |
H01L21/762 |
代理机构 |
Hauptman Ham, LLP |
代理人 |
Hauptman Ham, LLP |
主权项 |
1. A method of making a backside illuminated image sensor, the method comprising:
forming a first isolation structure in a pixel region of a substrate, wherein a bottom of the first isolation structure is exposed at a back surface of the substrate; forming a second isolation structure in a peripheral region of the substrate, wherein the second isolation structure has a depth less than a depth of the first isolation structure; forming an implant region adjacent to at least a portion of sidewalls of the first isolation structure, wherein the portion of the sidewalls is located closer to the back surface than a front surface of the substrate, wherein the second isolation structure is free of the implant region; and forming a third isolation structure between a sensor element adjacent to the peripheral region and an active device in the peripheral region adjacent to a pixel region, wherein a depth of the third isolation structure is equal to the depth of the first isolation structure. |
地址 |
TW |