| 主权项 |
1. A data storing method for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module has a plurality of memory cells, a plurality of word lines and a plurality of bit lines, each of the memory cells electrically connects with one of the word lines and one of the bit lines, each of the memory cells stores a plurality of bit data, and each of the bit data may, according to at least a voltage, be identified as a first state or a second state, the data storing method comprises:
programming data into a plurality of memory cells connecting to a first word line among the word lines, wherein a first predetermined reading voltage is initially configured for the first word line; adjusting the first predetermined reading voltage to obtain a first available reading voltage for the first word line and applying the first available reading voltage to the first word line to read first page data, wherein the first page data may be corrected by an error checking and correcting circuit correctly; and when a first difference value between the first available reading voltage and the first predetermined reading voltage is larger than a first predetermined threshold value, programming the first page data into a plurality of memory cells connecting to a second word line among the word lines, wherein the second word line is different from the first word line. |
