发明名称 Cooling plate, method for manufacturing the same, and member for semiconductor manufacturing apparatus
摘要 A member for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al—Si—Mg or Al—Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.
申请公布号 US9255747(B2) 申请公布日期 2016.02.09
申请号 US201414515736 申请日期 2014.10.16
申请人 NGK Insulators, Ltd. 发明人 Jindo Asumi;Inoue Katsuhiro;Katsuda Yuji;Kataigi Takashi;Amano Shingo;Sugimoto Hiroya
分类号 B23K31/02;C04B35/653;B32B9/06;B32B15/04;B32B15/00;F28F7/00;F28D15/00;F28F3/12;C04B35/565;C04B35/645;B23K1/00;B23K1/19;C04B35/56;C04B35/58;C04B37/00;F28F21/08;H01L21/683 主分类号 B23K31/02
代理机构 Burr & Brown, PLLC 代理人 Burr & Brown, PLLC
主权项 1. A cooling plate having an internal refrigerant path and used for cooling an alumina ceramic member, including: a first substrate formed of a dense composite material, the dense composite material containing silicon carbide particles, titanium silicide, titanium silicon carbide, and titanium carbide, the silicon carbide particle content being in the range of 37 to 60 mass %, each of the amounts of titanium silicide, titanium silicon carbide, and titanium carbide being lower than the mass percentage of the silicon carbide particles, the percentage of open pores of the dense composite material being 1% or less, a second substrate formed of the dense composite material and having a punched portion, the punched portion having the same shape as the refrigerant path, a third substrate formed of the dense composite material, a first metal bonding layer between the first substrate and the second substrate formed by thermal compression bonding of the first substrate and the second substrate with a metal bonding material interposed therebetween, and a second metal bonding layer between the second substrate and the third substrate formed by thermal compression bonding of the second substrate and the third substrate with a metal bonding material interposed therebetween.
地址 Nagoya JP