ＧａＮ系半導体発光素子,申请号JP20110281678-传众专利搜索

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发明名称	ＧａＮ系半導体発光素子
摘要
申请公布号	JP5853672(B2)	申请公布日期	2016.02.09
申请号	JP20110281678	申请日期	2011.12.22
申请人	日亜化学工業株式会社	发明人	蔭山弘明
分类号	H01L33/40;H01L33/32;H01L33/38	主分类号	H01L33/40
代理机构		代理人
主权项
地址

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