Optoelectronic devices

摘要

The present invention relates integrated optoelectronic devices comprising light emitting field-effect transistors. We describe an optoelectronic device comprising a light-emitting field effect transistor (LFET) with an organic semiconductor active layer and a waveguide integrated within the channel of the light-emitting field effect transistor, wherein said waveguide comprises a material which has a higher refractive index than said organic semiconductor. We also describe a light-emitting organic field transistor integrated with a ridge or rib waveguide incorporated within the channel of the LFET; and a similar light-emitting organic field effect transistor in which the waveguide incorporates an optical feedback mechanism.

主权项

1. An optoelectronic device comprising a light-emitting field transistor (LFET) with an organic semiconductor active layer and a ridge or rib waveguide structure:
wherein said ridge or rib waveguide structure forms a core of said waveguide; wherein said ridge or rib waveguide structure comprises a material which has a higher refractive index than said organic semiconductor; wherein said ridge or rib waveguide structure is confined entirely within the channel of the light-emitting field-effect transistor; and wherein said ridge or rib waveguide structure provides mode confinement in two dimensions within said LFET.