Protective sidewall techniques for RRAM

摘要

Some embodiments relate to a resistive random access memory (RRAM). The RRAM includes a RRAM bottom metal electrode, a variable resistance dielectric layer arranged over the RRAM bottom metal electrode, and a RRAM top metal electrode arranged over the variable resistance dielectric layer. A capping layer is arranged over the RRAM top metal electrode. A lower surface of the capping layer and an upper surface of the RRAM top metal electrode meet at an interface. Protective sidewalls are adjacent to outer sidewalls of the RRAM top metal electrode. The protective sidewalls have upper surfaces at least substantially aligned to the interface at which the upper surface of the RRAM top metal electrode meets the lower surface of the capping layer.

主权项

1. A resistive random access memory (RRAM), comprising:
a RRAM bottom metal electrode; a variable resistance dielectric layer arranged over the RRAM bottom metal electrode; a RRAM top metal electrode arranged over the variable resistance dielectric layer; a capping layer arranged over the RRAM top metal electrode, wherein a lower surface of the capping layer and an upper surface of the RRAM top metal electrode meet at an interface; and protective sidewalls having a different composition than the capping layer and adjacent to outer sidewalls of the RRAM top metal electrode, the protective sidewalls having upper surfaces at least substantially aligned to the interface at which the upper surface of the RRAM top metal electrode meets the lower surface of the capping layer; wherein the RRAM top metal electrode is made of a first material that includes a metal component, and wherein the protective sidewalls are made of a second material that includes the metal component and an oxide or nitride component.