| 摘要 |
There are disclosed herein various implementations of an integrated half-bridge circuit with low side and high side composite switches. In one exemplary implementation, such an integrated half-bridge circuit includes a III-N body including first and second III-N field-effect transistors (FETs) monolithically integrated with and situated over a first group IV FET. The integrated half-bridge circuit also includes a second group IV FET stacked over the III-N body. The first group IV FET (340a, 340b) is cascoded with the first III-N FET (330a, 330b) to provide one of the low side (320b) and the high side (320a) composite switches, and the second group IV FET (340a, 340b) is cascoded with the second III-N FET (330a, 330b) to provide the other of the low side (320b) and the high side (320a) composite switches. The first and second III-N FETs are normally ON FETs, and the low side composite switch and the high side composite switch are normally OFF switches. |
