| 摘要 |
A method for manufacturing a silicon carbide semiconductor device includes the following steps. There is prepared a silicon carbide substrate having a first main surface and a second main surface. On the first main surface, an electrode is formed. The silicon carbide substrate has a hexagonal crystal structure. The first main surface has an off angle of ±8° or smaller relative to a {0001} plane. The first main surface has such a property that when irradiated with excitation light having energy equal to or greater than a band gap of silicon carbide, luminous regions in a wavelength range of 750 nm or greater are generated in the first main surface at a density of 1×104 cm−2 or smaller. In this way, a yield of a silicon carbide semiconductor device can be improved. |
