Photoelectric conversion element and imaging device

摘要

The solid-state imaging device includes lower electrodes acting as pixel electrodes, an organic photoelectric conversion film formed on the lower electrodes and generating electric charge in response to received light, and a transparent upper electrode that are formed on a substrate having signal readout circuits. The organic photoelectric conversion film, a transition area having at least one of its film thickness and film quality undergone transition from a film thickness and film quality of an area corresponding to a pixel electrode area in which the lower electrodes have been formed is an area that starts from an outer edge of the organic photoelectric conversion film and ends at a point away from the outer edge by a distance of 200 μm or less.

主权项

1. A solid-state imaging device in which lower electrodes acting as pixel electrodes, an organic photoelectric conversion film formed on the lower electrodes and generating electric charge in response to received light, and a transparent upper electrode are formed on a substrate having signal readout circuits,
wherein in the organic photoelectric conversion film, a transition area having at least one of its film thickness and film quality undergone transition from a film thickness and film quality of an area corresponding to a pixel electrode area in which the lower electrodes have been formed is an area that starts from an outer edge of the organic photoelectric conversion film and ends at a point away from the outer edge by a distance of 5 to 200 μm, and wherein the distance is in a plane that is parallel to a surface of the organic photoelectric conversion film.