发明名称 |
Semiconductor structure with self-aligned wells and multiple channel materials |
摘要 |
Embodiments of the present invention provide a semiconductor structure having a strain relaxed buffer, and method of fabrication. A strain relaxed buffer is disposed on a semiconductor substrate. A silicon region and silicon germanium region are disposed adjacent to each other on the strain relaxed buffer. An additional region of silicon or silicon germanium provides quantum well isolation. |
申请公布号 |
US9257557(B2) |
申请公布日期 |
2016.02.09 |
申请号 |
US201414282463 |
申请日期 |
2014.05.20 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Brunco David P. |
分类号 |
H01L21/8238;H01L29/78;H01L21/762;H01L21/02;H01L21/265 |
主分类号 |
H01L21/8238 |
代理机构 |
Williams Morgan, P.C. |
代理人 |
Williams Morgan, P.C. |
主权项 |
1. A method of forming a semiconductor structure, comprising:
forming an n-doped, stress relaxed epitaxial first silicon germanium layer having a first germanium concentration onto a semiconductor substrate; depositing a compressively strained epitaxial second silicon germanium layer having a second germanium concentration onto the first silicon germanium layer, wherein the second germanium concentration is higher than the first germanium concentration; removing a portion of the second silicon germanium layer over a first region to create exposed regions of the first silicon germanium layer, thereby forming a preserved portion of the second silicon germanium layer over a second region; counterdoping to p-type the exposed regions of the first silicon germanium layer that are not covered by the second silicon germanium layer; selectively depositing a tensile strained, epitaxial silicon layer in the first region; and forming a plurality of shallow trench isolation regions in the first region and the second region of the second silicon germanium layer. |
地址 |
Grand Cayman KY |