Substrate having hetero-structure, method for manufacturing the same and nitride semiconductor light emitting device using the same

摘要

Provided is a hetero-substrate that may include a base substrate, a buffer layer disposed on the base substrate, and a first semiconductor layer disposed on the buffer layer, the first semiconductor layer including a nitride semiconductor. A defect blocking layer is disposed on the first semiconductor layer. The defect blocking layer may include a plurality of metal droplets. A second semiconductor layer may be disposed on the defect blocking layer, the second semiconductor layer including a nitride semiconductor.

主权项

1. A hetero-substrate comprising:
a base substrate; a buffer layer disposed on the base substrate; a first semiconductor layer disposed on the buffer layer, the first semiconductor layer including a nitride semiconductor; a defect blocking layer disposed on the first semiconductor layer, the defect blocking layer including a plurality of metal droplets, wherein the metal droplet comprises a first metal and a second metal disposed on the first metal, and wherein the first metal is covered with the second metal; and a second semiconductor layer disposed on the defect blocking layer, the second semiconductor layer including a nitride semiconductor.