Thin film superconducting wire and superconducting cable conductor

摘要

A thin film superconducting wire with a copper plating thin film produced on a surface of a laminated structure is inferior in bending properties to a thin film superconducting wire having no copper plating thin film. Therefore, a thin film superconducting wire according to the present invention is a thin film superconducting wire including a laminated structure having a substrate, a buffer layer located on one of main surfaces of the substrate, and a superconducting layer located on a main surface of the buffer layer opposite to a main surface facing the substrate. The thin film superconducting wire further includes a copper plating thin film covering an outer periphery of the laminated structure, a residual stress within the copper plating thin film serving as a compression stress. The laminated structure may have a sputtered silver layer. A silver covering layer covering the outer periphery of the laminated structure may be further provided between the copper plating thin film and the laminated structure.

主权项

1. A thin film superconducting wire comprising:
a laminated structure including,
a substrate,a buffer layer located on one of main surfaces of said substrate, anda superconducting layer located on a main surface of said buffer layer opposite to a main surface facing said substrate; and a copper plating thin film covering an outer periphery of said laminated structure, a residual stress within said copper plating thin film being a compression stress in a direction along the longitudinal extension of the thin film superconducting wire when the wire is in an unbent state, wherein the copper plating film is plated to the outer periphery by a solution obtained by dissolving copper sulfate pentahydrate in a sulfuric acid, wherein the solution has a copper sulfate concentration greater than or equal to 60 g/l and smaller than or equal to 150 g/l and a sulfuric acid concentration greater than or equal to 100 g/l and smaller than or equal to 220 g/l, and a thiourea concentration greater than or equal to 8 ppm and smaller than or equal to 12 ppm.