| 摘要 |
<P>PROBLEM TO BE SOLVED: To perform efficient doping while suppressing scattering of impurities. <P>SOLUTION: A laser doping method comprises: a first step of irradiating one surface of a silicon substrate with infrared laser light to be transmitted through the silicon substrate, in a state where impurities are in contact with the other surface of the silicon substrate; a second step of focusing the infrared laser light on an interface region between the silicon substrate and the impurities to heat the silicon substrate; and a third step of doping the silicon substrate with the impurities. <P>COPYRIGHT: (C)2013,JPO&INPIT |
