Semiconductor device

摘要

A semiconductor device is provided that includes a composite semiconductor body including a high voltage depletion-mode transistor and a low voltage enhancement-mode transistor. The high voltage depletion-mode transistor is stacked on the low voltage enhancement-mode transistor so that an interface is formed between the high voltage depletion-mode transistor and the low voltage enhancement-mode transistor. The low voltage enhancement-mode transistor includes a current path coupled in series with a current path of the high voltage depletion-mode transistor, and a control electrode is arranged at the interface.

主权项

1. A semiconductor device, comprising:
a composite semiconductor body, comprising:
a high voltage depletion-mode transistor; anda low voltage enhancement-mode transistor, the high voltage depletion-mode transistor being stacked on the low voltage enhancement-mode transistor so that an interface is formed between the high voltage depletion-mode transistor and the low voltage enhancement-mode transistor, wherein the low voltage enhancement-mode transistor is wider than the high voltage depletion-mode transistor such that the low voltage enhancement-mode transistor has an exposed surface uncovered by the high voltage depletion-mode transistor and which extends along said interface, and wherein the low voltage enhancement-mode transistor comprises a current path coupled in series with a current path of the high voltage depletion-mode transistor and a control electrode arranged at the interface, and an additional electrode that contacts a source of the high voltage depletion-mode transistor at a side of the high voltage depletion-mode transistor facing away from the interface, the additional electrode extending along an edge face of the high voltage depletion-mode transistor and onto the exposed surface of the low voltage enhancement-mode transistor so as to contact a drain of the low voltage enhancement-mode transistor.