| 发明名称 | Methods of forming memory cells having regions containing one or both of carbon and boron | ||
| 摘要 | Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron. The memory cell also has a switching material over and directly against the intermediate material, an ion reservoir material over the switching material, and a second electrode over the ion reservoir material. Some embodiments include methods of forming memory cells. | ||
| 申请公布号 | US9257646(B2) | 申请公布日期 | 2016.02.09 |
| 申请号 | US201514618936 | 申请日期 | 2015.02.10 |
| 申请人 | Micron Technology, Inc. | 发明人 | Schubert Martin;Qin Shu;Sills Scott E.;Ramaswamy Durai Vishak Nirmal;McTeer Allen;Hu Yongjun Jeff |
| 分类号 | H01L21/76;H01L45/00 | 主分类号 | H01L21/76 |
| 代理机构 | Wells St. John P.S. | 代理人 | Wells St. John P.S. |
| 主权项 | 1. A method of forming a memory cell, comprising: forming an intermediate material over and directly against a first electrode, the intermediate material comprising stabilizing species corresponding to one or both of carbon and boron; forming a switching material over and directly against the intermediate material; forming an ion reservoir material over the switching material; forming a second electrode over the ion reservoir material; and wherein the intermediate material comprises a thickness within a range of from greater than 0 angstroms to less than or equal to about 50 angstroms. | ||
| 地址 | Boise IA US | ||