Method for producing an optoelectronic semiconductor chip, and optoelectronic semiconductor chip

摘要

A method for producing an optoelectronic semiconductor chip is specified, comprising the following steps: providing an n-conducting layer (2), arranging a p-conducting layer (4) on the n-conducting layer (2), arranging a metal layer sequence (5) on the p-conducting layer (4), arranging a mask (6) at that side of the metal layer sequence (5) which is remote from the p-conducting layer (4), in places removing the metal layer sequence (5) and uncovering the p-conducting layer (4) using the mask (6), and in places neutralizing or removing the uncovered regions (4a) of the p-conducting layer (4) as far as the n-conducting layer (2) using the mask (6), wherein the metal layer sequence (5) comprises at least one mirror layer (51) and a barrier layer (52), and the mirror layer (51) of the metal layer sequence (5) faces the p-conducting layer (4).

主权项

1. A method for producing an optoelectronic semiconductor chip comprising the following method steps performed in the indicated order:
providing an n-conducting layer; arranging a p-conducting layer on the n-conducting layer, wherein at least one active zone provided for receiving and/or for emitting electromagnetic radiation during the operation of the optoelectronic semiconductor chip is formed between the n-conducting layer and the p-conducting layer; arranging a metal layer sequence on the p-conducting layer; arranging a mask at a side of the metal layer sequence which is remote from the p-conducting layer; in places removing the metal layer sequence and uncovering the p-conducting layer using the mask; and in places neutralizing or removing the uncovered regions of the p-conducting layer as far as the n-conducting layer using the mask, wherein the metal layer sequence comprises at least one mirror layer and a barrier layer, and the mirror layer of the metal layer sequence faces the p-conducting layer.