| 发明名称 | Solid-state image device, method of fabricating the same, and electronic apparatus | ||
| 摘要 | There is provided a solid-state image device, including a semiconductor substrate, a circuit formed on a first face of the semiconductor substrate, a grid pattern provided on a second face of the semiconductor substrate, and a semiconductor layer formed within the grid pattern and having a shape whose cross-sectional surface area in a plane parallel to a surface of the semiconductor substrate decreases with increasing distance from the semiconductor substrate. | ||
| 申请公布号 | US9257464(B2) | 申请公布日期 | 2016.02.09 |
| 申请号 | US201313855018 | 申请日期 | 2013.04.02 |
| 申请人 | SONY CORPORATION | 发明人 | Kikuchi Yoshiaki |
| 分类号 | H01L27/146;H01L31/18 | 主分类号 | H01L27/146 |
| 代理机构 | Hazuki International, LLC | 代理人 | Hazuki International, LLC |
| 主权项 | 1. A solid-state image device, comprising: a semiconductor substrate; a circuit formed on a first face of the semiconductor substrate; pixels; a grid pattern provided on a second face of the semiconductor substrate; an isolation region in-between the pixels; and a semiconductor layer formed within the grid pattern and having a shape whose cross-sectional surface area in a plane parallel to a surface of the semiconductor substrate decreases with increasing distance from the semiconductor substrate, wherein, the grid pattern is formed over the isolation region between the pixels. | ||
| 地址 | Tokyo JP | ||