发明名称 |
Semiconductor device and method of forming guard ring around conductive TSV through semiconductor wafer |
摘要 |
A semiconductor device has a plurality of conductive vias formed into a semiconductor wafer. An insulating lining is formed around the conductive vias and a conductive layer is formed over the insulating lining. A portion of the semiconductor wafer is removed so the conductive vias extend above a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and conductive vias. A first portion of the first insulating layer is removed and a second portion of the first insulating layer remains as guard rings around the conductive vias. A conductive layer is formed over the conductive vias. A second insulating layer is formed over the surface of the semiconductor wafer, guard rings, and conductive vias. A portion of the second insulating layer is removed to expose the conductive vias and a portion of the guard rings. |
申请公布号 |
US9257382(B2) |
申请公布日期 |
2016.02.09 |
申请号 |
US201313939044 |
申请日期 |
2013.07.10 |
申请人 |
STATS ChipPAC, Ltd. |
发明人 |
Na Duk Ju;Chia Lai Yee;Yong Chang Beom |
分类号 |
H01L23/48;H01L23/52;H01L29/40;H01L23/498;H01L21/768;H01L21/56;H01L21/683;H01L23/00 |
主分类号 |
H01L23/48 |
代理机构 |
Patent Law Group: Atkins and Associates, P.C. |
代理人 |
Atkins Robert D.;Patent Law Group: Atkins and Associates, P.C. |
主权项 |
1. A method of making a semiconductor device, comprising:
providing a semiconductor die; forming a conductive via through the semiconductor die with a portion of the conductive via extending above a first surface of the semiconductor die; and forming a guard ring overlaying the first surface of the semiconductor die within a height of the conductive via. |
地址 |
Singapore SG |