Charged particle beam apparatus, thin film forming method, defect correction method and device forming method

摘要

A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source 1, a condenser lens electrode 2, a blanking electrode 3, a scanning electrode 4, a sample stage 10 on which a sample 9 is mounted, a secondary charged particle detector 8 that detects a secondary charged particle 7 generated from the sample 9 in response to the charged particle beam irradiation, a reservoir 14 that accommodates cyclopentasilane as a source gas, and a gas gun 11 that supplies the source gas to the sample 9.

主权项

1. A charged particle beam apparatus comprising:
a charged particle source; a condenser lens electrode configured to condense a charged particle beam extracted from the charged particle source; a blanking electrode configured to switch irradiation and non-irradiation of the charged particle beam; a scanning electrode configured to scan and irradiate the charged particle beam; a sample stage on which a sample is to be mounted; a secondary charged particle detector configured to detect a secondary charged particle generated from the sample in response to irradiation of the sample with the charged particle beam; a reservoir in which a silicon compound represented by a general formula (I) below is accommodated as a source gas; and a gas gun configured to supply the source gas to a position of the sample that is irradiated with the charged particle beam,
SinXm  (I)(where n is an integer of 3 or larger, m is an integer of n, 2n−2, 2n, or 2n+2, and X represents a hydrogen atom and/or a halogen atom).