发明名称 Memory system performing multi-step erase operation based on stored metadata
摘要 A memory system, including a flash memory including multiple memory blocks, and a controller configured to erase each of the memory blocks using multiple steps. The controller stores, for each of the memory blocks, metadata indicating which of the multiple steps have been completed, and erases each of the memory blocks based on the stored metadata.
申请公布号 US9257192(B2) 申请公布日期 2016.02.09
申请号 US201414172941 申请日期 2014.02.05
申请人 Samsung Electronics Co., Ltd. 发明人 Lee Joon-Ho;Baek Jong-Nam;Ham Dong-Hoon;Yoo Sang-Wook;Hwang In-Tae
分类号 G11C16/04;G11C16/16;G11C16/08;G11C16/34 主分类号 G11C16/04
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A memory system, comprising: a flash memory comprising multiple memory blocks; and a controller configured to erase each of the memory blocks using multiple steps, wherein the controller stores, for each of the memory blocks, metadata indicating which of the multiple steps have been completed, and erases each of the memory blocks based on the stored metadata, wherein the controller erases the memory blocks by different erase commands for each of the multiple steps, and wherein the flash memory is a vertical NAND flash memory comprising charge trapped flash (CTF) cells.
地址 Suwon-si, Gyeonggi-do KR
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