发明名称 |
Memory system performing multi-step erase operation based on stored metadata |
摘要 |
A memory system, including a flash memory including multiple memory blocks, and a controller configured to erase each of the memory blocks using multiple steps. The controller stores, for each of the memory blocks, metadata indicating which of the multiple steps have been completed, and erases each of the memory blocks based on the stored metadata. |
申请公布号 |
US9257192(B2) |
申请公布日期 |
2016.02.09 |
申请号 |
US201414172941 |
申请日期 |
2014.02.05 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Lee Joon-Ho;Baek Jong-Nam;Ham Dong-Hoon;Yoo Sang-Wook;Hwang In-Tae |
分类号 |
G11C16/04;G11C16/16;G11C16/08;G11C16/34 |
主分类号 |
G11C16/04 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A memory system, comprising:
a flash memory comprising multiple memory blocks; and a controller configured to erase each of the memory blocks using multiple steps, wherein the controller stores, for each of the memory blocks, metadata indicating which of the multiple steps have been completed, and erases each of the memory blocks based on the stored metadata, wherein the controller erases the memory blocks by different erase commands for each of the multiple steps, and wherein the flash memory is a vertical NAND flash memory comprising charge trapped flash (CTF) cells. |
地址 |
Suwon-si, Gyeonggi-do KR |