Memory device, memory system, and operating methods thereof

摘要

A memory device, a memory system, and operating methods thereof are provided. The method of operating the memory device, which includes a first memory cell and a second memory cell neighboring the first memory cell, includes counting a disturbance value of the second memory cell each time the first memory cell is accessed, updating a disturbance count value of the second memory cell based on the counting, adjusting a refresh schedule based on the disturbance count value of the second memory cell, a desired threshold and a maximum disturbance count value, and resetting the disturbance count value of the second memory cell and the maximum disturbance count value when the second memory cell is refreshed according to the adjusted refresh schedule.

主权项

1. A method of operating a memory device including a plurality of memory cells, the plurality of memory cells including a first memory cell and a second memory cell neighboring the first memory cell, the method comprising:
counting a number of disturbances associated with the second memory cell each time the first memory cell is accessed; updating a disturbance count value of the second memory cell based on the counting; adjusting a refresh schedule based on the disturbance count value of the second memory cell, a desired threshold and a maximum disturbance count value, the adjusted refresh schedule at least indicating that, if the second memory cell is flagged, an irregular refresh operation is performed on the second memory cell prior to performing a regular refresh operation on the first memory cell and the second memory cell, the second memory cell being flagged when the disturbance count value associated with the second memory cell is above the desired threshold or the maximum disturbance count value; and resetting the disturbance count value of the second memory cell and the maximum disturbance count value when the second memory cell is refreshed according to the adjusted refresh schedule.